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Growth Uniformity of Epitaxy Silicon Grown at 200 °C Using 60 MHz Very High Frequency Plasma Enhanced Vapor Phase Epitaxy

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We studied effect of film growth uniformity for low temperature silicon epitaxy using 60 MHz Very High Frequency Chemical Vapor Deposition (VHF PECVD). High quality, high growth rate epitaxy silicon can be obtained at low temperature using VHF PECVD. The major source of the film uniformity appears to be voltage distribution across the plasma electrode, and the uniformity could be improved by using double symmetric power feed using shielded cable. Use of double symmetric power feed around the center of the plasma electrode greatly reduced the voltage non-uniformity, and the shielded cables made stable power transport. As a result, the film thickness uniformity was improved from 21% to 5.8% with our modified reactor configuration.
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Keywords: Epitaxy Silicon; Kerfless Silicon; Uniformity; VHF-PECVD

Document Type: Research Article

Affiliations: 1: KIER-UNIST Advanced Center for Energy, Korea Institute of Energy Research, Ulsan 44919, South Korea 2: Department of Energy Engineering, Ulsan National Institute of Science and Technology, Ulsan, 44919, South Korea

Publication date: November 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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