The Extraction and Analysis of Parasitic Resistance of Nanowire-FET
In this study, the parasitic resistance components of lateral nanowire field effect transistors (NWFET) are modeled and extracted using technology computer aided design (TCAD) simulation. To verify the extraction result, the equation of the Berkeley Short-channel IGFET Model for the
class of Common Multi-Gate (BSIM-CMG) FETs is also applied. With the development of contact resistivity, the dominant component determining overall resistance is changed from the contact resistance to the diameter of the nanowire. Considering the effective on-current, we proposed a reasonable
diameter of the nanowire for sub 5-nm node gate-all-around (GAA) nanowire FET.
Keywords: BSIMCMG; Nanowire FET; Parasitic Resistance
Document Type: Research Article
Affiliations: 1: Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering and Computer Science, Seoul National University, Seoul 151-747, South Korea 2: Department of Electronics Engineering, Korea National University of Transportation, Chungju-City, 380-702, South Korea
Publication date: 01 October 2017
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content