Influence of Ga Concentration on Structural and Optical Properties of Ga-Doped ZnO Thin Films Grown on Muscovite Mica Substrates
Muscovite mica is a viable alternative to polymer substrates because they are flexible, inexpensive, transparent, and exhibits good heat resistance. However, there are few studies on the characteristics of ZnO grown on mica substrates. Hence, we investigated properties of sol—gel derived Ga-doped ZnO (GZO) thin films grown on mica substrates. All the samples exhibited granular structures comprising spherical nano-sized crystallites; however, cracks were observed on the surface of the film at the highest Ga concentration (5 at.%). The photoluminescence and electrical properties were improved significantly and the optical band gap was blue-shifted, with an increase in Ga concentrations up to 3 at.%. The optical band gap exhibited a blue-shift with an increase in Ga concentrations up to 3 at.%; this was largely attributed to the Burnstein-Moss effect. The donor Ga atoms provide additional carriers, causing the Fermi level to move into the conduction band, so that the gap becomes larger. However, the overall characteristics of the film at 5 at.% Ga concentration were deteriorated by the surface cracks.
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Document Type: Research Article
Affiliations: Department of Nanoscience and Engineering, Inje University, 197, Inje-ro, Gimhae-si, Gyeongsangnam-do, 621-749, Republic of Korea
Publication date: August 1, 2017
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