Enhancement of the Electrical Performance of the Organic Ferroelectric Memory Transistor by Reducing the Surface Roughness of the Polymer Insulator with a Homo-Bilayer PVDF-TrFE
We suggest a feasible method to enhance the electrical performance of the organic nonvolatile memory transistor by reducing the surface roughness of the ferroelectric polymer insulator. A homo-bilayer of poly(vinylidenefluoride-co-trifluoroethylene) [P(VDF-TrFE)] was used to control the high surface roughness of the conventional single layer [P(VDF-TrFE)] polymer insulator. The smoothening of the polymer insulator was achieved as the Z rms roughness was as low as 11.9 nm compared to the aboriginal single P(VDF-TrFE) film of 18.8 nm. The homo-bilayer P(VDF-TrFE) thin film transistor showed a higher memory on-off ratio (about 100) and mobility (2.9 × 10-2 cm2v-1s-1 compared with the native P(VDF-TrFE) with memory on-off ratio of 16 and mobility of 2.1 × 10-2 cm2v-1s-1. The underlying mechanism for the mobility enhancement which resulted in a high on-off ratio is mainly attributed to the reduction of the surface roughness of the ferroelectric polymer insulator.
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Document Type: Research Article
Affiliations: Department of Creative Convergence Engineering, Hanbat National University, Daejeon, 305-719 Republic of Korea
Publication date: August 1, 2017
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