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Characteristics of Inverted Organic Photodiodes Fabricated with YbF3 as an Electron Transport Layer

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An inverted organic photodiode (OPD) consisting of ITO/YbF3/P3HT:PCBM/MoO3/Ag was fabricated. Here, YbF3 was used as an n-type buffer layer to tune the work function of indium tin oxide (ITO). The prepared OPD exhibited high detectivity (2.11 × 1012 Jones) and bandwidth (131 KHz) as a result of the high photocurrent and low dark current. In particular, the decrease in dark current was attributed to the hole blocking ability of the YbF3 buffer layer with a low work function.
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Keywords: Electron Transport Layer; Organic Photodiode; Ytterbium Fluoride

Document Type: Research Article

Affiliations: Department of Chemical and Biomolecular Engineering, Sogang University, Seoul 121-742, Korea

Publication date: August 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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