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Optimized Design of Multi-Zone Junction Termination Extension for High Voltage Power Devices (IGBTs)

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In this study, high voltage insulated-gate bipolar transistor (IGBT) devices are experimentally optimized to be used in power propulsion control unit. Various processing conditions such as resistivity of Si wafer, implantation, and geometrical field rings were tested to obtain high breakdown voltage (BV). Optimal design of multi-zone junction termination extension (JTE) with ring fields formed on 160 Ω silicon wafer by only one-step wet etching under implant conditions (energy: 120 keV and dosage: 9.0×1013 cm-2) is suitable to obtain the highest BV. From technology computer aided design (TCAD) simulation, JTE-IGBT with low fixed oxide charge (QF) derives high BV due to the effect of electric field.
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Keywords: Breakdown Voltage; Electric Field; Fixed Oxide Charge; Insulated-Gate Bipolar Transistor; Test Element Group

Document Type: Research Article

Affiliations: 1: Department of Convergence Science and Technology, Dong-A University, 37 Nakdong-daero 550 beon-gil, Saha-gu, Busan 49315, Republic of Korea 2: Department of Polymer Science and Engineering, Kyungpook National University, 80 Daehak-ro, Buk-gu, Daegu 41566, Republic of Korea 3: National Institute for Nanomaterials Technology (NINT), Pohang University of Science and Technology (POSTECH), 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea 4: Maple Semiconductor Inc., 77 Cheongam-ro, Nam-gu, Pohang 37673, Republic of Korea

Publication date: August 1, 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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