Influence of Annealing Temperature on Band Gap Shift and Optical Constants of Al-Doped ZnO Thin Films Deposited on Muscovite Mica Substrates
Al-doped ZnO (AZO) thin films deposited on muscovite mica substrates by sol–gel spin coating were annealed from 200 to 600°C to investigate that this annealing has the effect on their photoluminescence (PL) and optical properties and optical constants. All the films had the strong near-band-edge (NBE) emission, the weak deep-level emission, and the average transmittance of over 80% in the visible spectrum. Especially, the NBE peaks in the PL spectra and the absorption edges in the transmittance spectra gradually shifted toward lower energies with an increase in annealing temperature. This led to a decrease in the Urbach energy of the films. From the refractive index values, optical constants such as the single oscillator energy, dispersion energy, and average oscillator strength, etc. were found to decrease with increasing annealing temperature, which indicates that thermal energy can increase the electron density of the film and the crystallinity of film can be improved.
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Document Type: Research Article
Affiliations: Department of Nanoscience and Engineering, Inje University, 197, Inje-ro, Gimhae-si, Gyeongsangnam-do, 621-749, Republic of Korea
Publication date: August 1, 2017
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