Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory
We investigated the stress distribution and electrical characteristics according to changes in the process parameters in a vertical NAND (VNAND) flash cell with a poly-Si channel. We used technology computer-aided design to confirm that process parameters changes affect the stress distribution
in a VNAND flash cell and the stress in the poly-Si channel. Also, we found that, as the stress distributions changed, the electrical characteristics depended significantly on the annealing temperature, channel hole angle, and tungsten intrinsic stress in a VNAND flash cell. Thus, the industry
needs to develop and apply better process parameters and acquire a better understanding of how the electrical characteristics of a VNAND flash cell depend on those parameters.
Keywords: Annealing Temperature; Intrinsic Stress; Poly-Si Channel Stress; Taper Angle; Vertical NAND Flash
Document Type: Research Article
Affiliations: Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea
Publication date: 01 July 2017
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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