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Mechanical Stress Distribution and the Effects of Process Parameter Changes in Vertical NAND Flash Memory

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We investigated the stress distribution and electrical characteristics according to changes in the process parameters in a vertical NAND (VNAND) flash cell with a poly-Si channel. We used technology computer-aided design to confirm that process parameters changes affect the stress distribution in a VNAND flash cell and the stress in the poly-Si channel. Also, we found that, as the stress distributions changed, the electrical characteristics depended significantly on the annealing temperature, channel hole angle, and tungsten intrinsic stress in a VNAND flash cell. Thus, the industry needs to develop and apply better process parameters and acquire a better understanding of how the electrical characteristics of a VNAND flash cell depend on those parameters.

Keywords: Annealing Temperature; Intrinsic Stress; Poly-Si Channel Stress; Taper Angle; Vertical NAND Flash

Document Type: Research Article

Affiliations: Department of Electronic Engineering, Hanyang University, Seoul 133-791, Korea

Publication date: 01 July 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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