Controlled Fabrication of Silicon Nanostructures by the Nanosphere Lithography: Application for Low Reflection Over Wide Spectrum
Nanostructures have been widely employed to reduce optical refkection for various optoelectronic devices. In this work, the aligned nanostructure arrays of with desirable diameter and density were obtained. We demonstrated the potential applications of nanosphere lithography in fabrication
of Si nanoholes (SiNHs) and Si nanowires (SiNWs) with excellent broadband light antirefkectance properties. Both nanostructures drastically suppress the refkection across the whole measured spectrum with wavelength above Si band gap (1.12 eV) as compared to that of planar Si wafer. The refkectance
intensity of SiNHs and SiNWs is less than 6% over broad range of 400 to 1000 nm. The nanosphere lithography technique is expected to have potential applications in fabrication of nanostructures with various properties.
Keywords: Metal-Assisted Chemical Etching; Nanosphere Lithography; RIE; SiNH; SiNW
Document Type: Research Article
Affiliations: The Key Laboratory of Optoelectronic Material and Device, Mathematics and Science College, Shanghai Normal University, Shanghai 200234, P. R. China
Publication date: 01 July 2017
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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