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Light Extraction Enhancement of GaN-Based Light-Emitting Diodes Using Hollow Silica Nanospheres

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We report a method for enhancing light extraction in GaN-based light-emitting diodes (LEDs) using hollow silica (SiO2) nanospheres (HSNs). To create the HSNs formed on the surface of the LED, a polystyrene (PS) core was removed by a thermal annealing process from synthesized PS/SiO2 core/shell structures. HSN-coated LEDs show a dramatic improvement in electroluminescence (EL) intensity among different surface structured LEDs coated with bare silica nanospheres and without any nanostructures. The finite-difference time-domain simulation results are in accordance with experimentally observed ones. The enhancement in EL intensity using HSNs coated LED can be attributed to the increase in the probability of light escape by reducing Fresnel reflection and by frequent light scattering within the nanospheres.

Keywords: FDTD; GaN; Hollow Nanosphere; Light Extraction; Light-Emitting Diode

Document Type: Research Article

Affiliations: 1: Department of Electronics and Computer Engineering, Hanyang University, Seoul 04763, Republic of Korea 2: Department of Advanced Convergence Technology and Research Institute for Advanced Convergence Technology, Korea Polytechnic University, Siheung-si 429-793, Republic of Korea

Publication date: 01 June 2017

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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