Influence of Thermal Annealing on the Physical Properties of ZnO Films Grown on Si and GaAs Substrates
We have an extensive study about the influence of thermal annealing on the physical properties of the textured grown ZnO films on Si and GaAs substrates by using rf-sputtering. The nanosized grains of ZnO films slowly increase with the increase in annealing temperature, but they abruptly increase at critical temperatures, 700 °C in the GaAs substrate and 900 °C in the Si substrate. The emission intensities at the near-band edge (NBE) of the annealed ZnO films at the critical temperatures are significantly enhanced due to donor-bound excitons. On the other hand, in the case of the ZnO film on the GaAs substrate the intermediate compounds between ZnO and GaAs are observed in the X-ray diffraction curve. The abrupt coarsening of nanosized grains, the compound formation of elements between the film and the substrate, and the rapid increase of NBE emission intensities found in the ZnO/Si and ZnO/GaAs heterostructures, annealed at the critical temperatures, are ascribed to the outdiffusion of the substrate elements Ga or As and Si into the ZnO films, respectively. It is confirmed that the high-temperature annealing above the critical temperatures causes the serious interdiffusions between the ZnO film and the Si substrate and between the ZnO film and the GaAs substrate, which collapse their heterointerfaces and expose substrate elements on the ZnO surfaces.
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Document Type: Research Article
Affiliations: 1: Department of Nanobiotronics, Hoseo University, Asan 31499, Korea 2: Korea Photonics Technology Institute, Gwangju 61007, Korea
Publication date: May 1, 2017
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