Design of Active Contact Area, Reduced Leakage Current 4H–SiC Schottky Diodes Using Epi-Regrowth

In this study, for the development of future power electronic switching devices we have fabricated a silicon carbide diode using an epi-regrowth technique. We have calculated electrical properties for comparison with those of normal junction barrier Schottky (JBS) devices and have evaluated the properties for on/off characteristics. With the epi-regrowth design, on-status current densities are higher. The main advantage of wide band gap semiconductors for power device applications is the very low resistance of the drift region even when it is designed to support large voltages. This favors the development of high voltage, unipolar devices which have much superior switching speeds than bipolar structures. Also in this study, we have determined that leakage current is reduced by the epi-regrowth technique and there is improved Schottky contact.