Resistive Switching of Metal-Insulator-Silicon ReRAM with Solution Process Based GeSe Thin Film
The Al/Ti/GeSe/p
+-Si metal-insulator-silicon (M-I-S) structure was formed to demonstrate the resistance switching characteristics of resistive random access memory (ReRAM) using amorphous GeSe thin films. The amorphous GeSe thin films were fabricated via solution process
on p+-Si substrate, which was used as the bottom electrode instead of a metal layer. We proved the bipolar resistive switching characteristic from the GeSe solution thin films without an oxidizable metal layer on the p
+-Si bottom electrode.
Keywords: Chalcogenide; ReRAM; Solution Process
Document Type: Research Article
Affiliations: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 01897, Korea
Publication date: 01 May 2017
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