Etching Characteristics of TaNO Thin Film for Top Electrode Materials Using Inductivity Coupled CF4/Ar Plasma
In this research, we investigated the etch rate of TaNO thin film and selectivity with mask material (SiO2) in inductively coupled CF4/Ar plasma. As the CF4 content increased from 0% to 80% in CF4/Ar plasma, the etch rate of TaNO thin film
was increased from 56.1 to 495.3 nm/min. The results of X-ray photoelectron spectroscopy (XPS) showed an efficient destruction of the oxide bonds by the ion bombardment as well as an accumulation of non-volatile byproducts on the etched surface of TaNO thin film.
Keywords: AES; Etching; OES; TaNO; XPS
Document Type: Research Article
Affiliations: School of Electrical and Electronics Engineering, Chung-Ang University, 06974, Korea
Publication date: 01 December 2016
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content