Properties of APTES-Functionalized 4H-SiC Devices
This work presents the characterization of a 3-aminopropyltriethoxysilane self-assembled monolayer in 4H-SiC diode test structures and lateral field effect transistors. The chemical properties of heterostructures were investigated by atomic force microscopy and Fourier transform infrared
spectroscopy, which indicate bonding of the organosilane to 4H-SiC. The currents of organosilane functionalized 4H-SiC diode test structures and lateral FETs were decreased, which indicates they act as an insulator and/or positive charges of the amine group.
Keywords: 4H-SiC; APTES; Self-Assembled Monolayer
Document Type: Research Article
Affiliations: Department of Electronic Materials Engineering, Kwangwoon University, Seoul 139-701, Korea
Publication date: 01 December 2016
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