High Temperature Behavior of Injection and Radiative Efficiencies and Its Effects on the Efficiency Droop in InGaN/GaN Light Emitting Diodes
The elevated temperature (>400 K) behavior of carrier injection and radiative efficiencies and its effects on the efficiency droop in InGaN/GaN light emitting diodes (LEDs) is investigated. In order to identify the dominant mechanism of efficiency loss at room temperature and high
temperature, we measured the external quantum efficiency (EQE), radiative efficiency (RE) and carrier injection efficiency (CIE) experimentally. Through these methods, we showed that the carrier leakage is a dominant cause in the efficiency loss at room temperature, while the intrinsic loss
such as Auger recombination in the radiative efficiency becomes an important factor in the efficiency loss at high temperature. In order to drive a consistent conclusion, the temperature-dependent quantum efficiencies (T-D QE), EQE, RE and CIE are compared. We believe our results can present
a very useful characterization method to answers many practical and fundamental questions regarding LEDs efficiency at various temperatures.
Keywords: Auger Recombination; Carrier Leakage; Efficiency Droop; InGaN/GaN Light Emitting Diodes; Quantum Efficiency
Document Type: Research Article
Affiliations: 1: Department of Physics, Kongju National University, Kongju, Chungnam, 314-701, South Korea 2: UJL Inc., Jeongwang-Dong, Siheung-Si, Gyeonggi-Do, 15101, South Korea 3: Department of Advanced Materials Engineering, Chungnam National University, Daejeon, 305-764, South Korea
Publication date: 01 November 2016
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