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Effects of Sulfurization Temperature on Cu(In, Ga)S2 Thin Film Solar Cell Performance by Rapid Thermal Process

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Cu(In, Ga)S2 (CIGS) absorbers were prepared using two-step process. Cu–In–Ga precursors were deposited by sputtering method and then were sulfurized by rapid thermal process based on H2S gas. Sulfurization temperature was changed from 470 °C to 510 °C. As the processing temperature increased, larger grains and denser absorbers were observed. The polycrystalline chalcopyrite structure of CuInGaS2 was shown in all samples, and their XRD peak was dominantly observed at (112) direction. CIGS thin film solar cells were fabricated with wide-bandgap absorbers obtained by varying sulfurization temperature. The best efficiency was shown with the processing temperature of 490 °C and 8.93% with 1.507 eV of wide optical bandgap.

Keywords: Cu(In, Ga)Se2; Rapid Thermal Process; Solar Cell; Sulfurization; Thin Film

Document Type: Research Article

Affiliations: 1: Applied Optics and Energy R&D Group, Korea Institute of Industrial Technology, Gwangju 500-480, Republic of Korea 2: SNTEK Co., Ltd., Suwon 441-813, Republic of Korea

Publication date: 01 May 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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