Very Smooth Ultrananocrystalline Diamond Film Growth by a Novel Pretreatment Technique
Very smooth ultrananocrystalline diamond (UNCD) film growth on SiC substrate was achieved by a novel pretreatment technique consisted of SiC surface texturing and deaggregation of nanodiamond (ND) seed particles. Texturing of SiC surfaces in Ar and SF6/O2 plasmas
was found to be able to provide normalized roughness values of 0.5–7.0 compared to the untreated surface. SiC surface plasma-textured and seeded with H2 heat-treated ND particles at 600 °C showed the highest nucleation density of ∼44.2 × 1011 cm−2
and a highly uniform coverage of surface with very fine ND seeds. The UNCD film grown with this new pretreatment technique showed a very smooth surface morphology consisted of small and uniformly distributed grains.
Document Type: Research Article
Publication date: 01 February 2016
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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