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Substrate Considerations for the Formation of the Graphene-CNTs Hybrid on the Dielectric Substrate

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Graphene-carbon nanotube (CNT) hybrid materials are directly synthesized on an unpolished SiO2 substrate by the use of a chemical vapor deposition (CVD) system with a two-temperature reactor. The two-temperature reactor utilized here proves more efficient than that of the one-temperature reactor. Potential candidate substrates for the formation of the graphene-CNT hybrid materials are discussed in detail. SEM and Raman results demonstrate that the unpolished SiO2 base is the most fitting substrate for the graphene-CNT hybrid CVD growth. These results open the way for direct and high-efficiency production of graphene-CNT hybrid materials with high conductivity and transmittance.
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Document Type: Research Article

Publication date: January 1, 2016

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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