Indium Doped ZnO Films Prepared by RF Magnetron Sputtering: Effect of Substrate Temperature on the Strain-Induced Band Gap
Indium doped zinc oxide (InZnO) thin films were deposited onto corning glass substrates by RF magnetron sputtering. The dependence of crystal structure, surface morphology, optical properties and electrical conductivity on substrate temperature was investigated using XRD, AFM, UV-vis Spec-trophotometer, Fluorescence Spectrophotometer and four-point probe. The films were prepared at different substrate temperatures viz, room temperature (RT), 473 K and 673 K at RF power 200 W. All the films showed preferred orientation along (002) direction. Crystallite size increased from 14 to 19 nm as the substrate temperature was increased to 473 K. With increase in substrate temperature the crystallites did not show any further growth. AFM analysis showed that the rms roughness value decreased from 60 nm to 23 nm when the substrate temperature was increased to 673 K. Optical measurements revealed maximum band gap and minimum refractive index for the film prepared at 473 K. A strong correlation between the band gap variation and the strain developed at different substrate temperatures is established.
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Document Type: Research Article
Publication date: March 1, 2012
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