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Effect of Flash Lamp Annealing and Laser Spike Annealing on Random Dopant Fluctuation of 15-nm Metal-Oxide-Semiconductor Devices

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Comparison of two different implantation processing techniques for random dopant (RD)-induced threshold voltage fluctuation (σV th) in 15-nm metal-oxide-semiconductor (MOS) devices is reported. Implantations of flash lamp annealing and laser spike annealing are simulated using a kinetic Monte Carlo (KMC) technique. The KMC generated distributions are mapped into device channel for three-dimensional quantum mechanical transport simulation to estimate threshold voltage fluctuation. The main results of this study show that the laser spike annealing could achieve 30% reduction of RDF-induced σV th for low-power application of 15-nm MOS devices, compared with flash lamp annealing.
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Document Type: Research Article

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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