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Formation and Rupture of Ag Conductive Bridge in ZrO2-Based Resistive Switching Memory

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ZrO2-based resistive switching memory has attracted much attention according to its possible application in the next-generation nonvolatile memory. However, the resistive switching mechanism of the ZrO2-based memory device is still controversial. In this study, the mechanism of the ZrO2-based memory device is demonstrated that the resistive switching occurs because of the migration of Ag+ ions. While a positive voltage is applied, Ag+ ions in the ZrO2 film migrate to connect the Pt bottom electrode, causing the formation of Ag conductive bridge. On the other hand, while a negative voltage is applied, Ag+ ions migrate toward the Ag top electrode, leading to the rupture of the Ag conductive bridge. In addition, the resistive switching properties of the ZrO2-based memory device, such as switching voltages and non-destructive readout property, are also demonstrated in this study. Based on the experimental results, the ZrO2-based memory device with clear resistive switching mechanism can be possibly used in the next-generation nonvolatile memory.
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Document Type: Research Article

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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