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Fabrication and Electrical Characterization of p-Cu2O/n-ZnO Heterojunction

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The conducting metal oxide (ZnO, Cu2O) films were used for fabrication of pn heterojunction by rf sputtering and electrodeposition techniques respectively. The as synthesized films were characterized by X-ray diffraction (XRD), scanning electron microscope (SEM), UV spectroscopy and electrical techniques. The electrical properties of the p-Cu2O/n-ZnO heterojunction were examined using the current–voltage measurements. The current–voltage (IV) result showed that potential barrier was higher than the turn-on voltage, which was attributed to the presence of the interface defect states. The PN junction parameters such as ideality factor, barrier height, and series resistance were determined using conventional forward bias current–voltage characteristics. The annealing of Cu2O increase the crystallinity size and which enhance the photo current from 1.6 mA/cm2 to 3.7 mA/cm2. The annealing of respective film resulted in a decrease of these parameters with an increase in efficiency of solar cell from 0.14% to 0.3% at 350 °C.
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Document Type: Research Article

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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