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Simulation, Fabrication and Characterization of ZnO Based Thin Film Transistors Grown by Radio Frequency Magnetron Sputtering

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We report the performance of the thin film transistors (TFTs) using ZnO as an active channel layer grown by radio frequency (RF) magnetron sputtering technique. The bottom gate type TFT, consists of a conventional thermally grown SiO2 as gate insulator onto p-type Si substrates. The X-ray diffraction patterns reveal that the ZnO films are preferentially orientated in the (002) plane, with the c-axis perpendicular to the substrate. A typical ZnO TFT fabricated by this method exhibits saturation field effect mobility of about 0.6134 cm2/V s, an on to off ratio of 102, an off current of 2.0 × 10−7 A, and a threshold voltage of 3.1 V at room temperature. Simulation of this TFT is also carried out by using the commercial software modeling tool ATLAS™ from Silvaco-International. The simulated global characteristics of the device were compared and contrasted with those measured experimentally. The experimental results are in fairly good agreement with those obtained from simulation.
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Document Type: Research Article

Publication date: March 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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