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Macroscopic and Microscopic Investigation on Chemical Mechanical Polishing of Sapphire Wafer

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Sapphire (α-Al2O3) is an important ceramic material that is widely used in substrate material for electronics. We investigate the chemical reaction layer on a sapphire wafer using X-ray photoelectron microscopy (XPS) and atomic force microscopy (AFM). The frictional characteristics of sapphire chemical mechanical polishing (CMP) was studied using in-situ friction force monitoring system. From XPS analysis and AFM experiment, a chemically-reacted layer was verified on the sapphire surface through a chemical reaction between the sapphire and chemicals in a slurry. During sapphire CMP, the friction force mainly depended on the applied pressure. The material removal efficiency per unit friction energy in sapphire CMP was 6.18 nm/kJ.
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Document Type: Research Article

Publication date: February 1, 2012

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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