Annealing Effects on Capacitance–Voltage Characteristics of a-Si/SiNx Multilayer Prepared Using Hot-Wire Chemical Vapour Deposition
Post-deposition annealing of a-Si/SiNx multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance–voltage (HFCV) characteristics. Various a-Si/SiNx multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 °C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C–V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (Dit) remains constant.
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Document Type: Research Article
Publication date: April 1, 2011
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