Electrical Characteristics of Ge-Based Metal-Insulator-Semiconductor Devices with Ge3N4 Dielectrics Formed by Plasma Nitridation
We have fabricated pure germanium nitrides (Ge3N4) using high-density plasma nitridation and investigated electrical properties of Au/Ge3N4/Ge capacitors. We achieved equivalent oxide thickness (EOT) of 1.4 nm, and dielectric constant of Ge3N4 was estimated to be 9.7. The gate leakage current density of 4.3 A/cm2 in the accumulation condition at Vfb−1 V, where Vfb is the flatband voltage, was one order of magnitude lower than that of conventional poly-Si/SiO2/Si stacks. The interface state density (Dit) of Ge3N4/Ge interfaces evaluated by a low-temperature conductance method exhibited a minimum value of 9.4 × 1011 cm−2eV−1 at E − Ev = 0.27 eV. Furthermore, the insulating property and interface quality of Ge3N4/Ge system was found to be thermally stable up to 650 °C. These results indicate that Ge3N4 is a promising candidate for either a gate insulator or an interfacial layer under high-k dielectrics for Ge-MIS devices.
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Document Type: Research Article
Publication date: April 1, 2011
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