Ion Beam Modification of Exchange Coupling to Fabricate Patterned Media
For bit-patterned media, media with low remanent magnetization (M
r) and high M
r regions are needed for storing information, which is usually achieved by lithographically defining magnetic and non-magnetic regions. In this work, we have investigated
the use of ion beam modification of media surface to define the low and high M
r states using a medium that is at a low M
r state to start with. The low M
r state is achieved by the use of synthetic antiferromagnetic coupling obtained in Co-alloy/Ru/Co-alloy
trilayer structured film. Local ion beam modification at 30 keV energy using Ga+ ions was used to create high M
r regions. AFM and MFM observations indicated that patterned regions of low and high M
r can be observed with ion beam irradiation. This
technique is a potential method to achieve patterned media without the need of planarization techniques.
Keywords: ANTIFERROMAGNETICALLY COUPLED MEDIA; FOCUSED ION BEAM; MAGNETIC MATERIALS; NANOFABRICATION; PATTERNING
Document Type: Research Article
Publication date: 01 March 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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