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Antimony Surfactant Effect on Green Emission InGaN/GaN Multi Quantum Wells Grown by MOCVD

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An improvement in the optical and structural properties of green emitting InGaN/GaN Multi Quantum Wells (MQWs) was obtained by using antimony (Sb) as a surfactant during InGaN growth. Keeping the growth conditions for InGaN constant, Sb was introduced during InGaN growth while varying the [Sb]/([In] + [Ga]) flow ratio from 0 to 0.16%. The analysis results suggest that using the optimum [Sb]/([In] + [Ga]) ratio (0.04%–0.1%) during InGaN growth greatly improves the optical and structural properties of the MQWs without incorporating much Sb into the growing film and that the emission wavelength is also maintained with a slight blue shift. Under the optimum conditions of 0.05% Sb addition, the PL intensity was increased by as much as 3.3 times compared to the sample without Sb addition. The root mean square (RMS) roughness was reduced from 2.2 nm to 1.9 nm and the pit density was decreased from 2.0 × 1010 cm−2 to 1.2 × 1010 cm−2 when the amount of Sb was increased from 0% to 0.05%.
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Document Type: Research Article

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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