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Characteristics and Fabrication of Vertical Type Organic Light Emitting Transistor Using Dimethyldicyanoquinonediimine (DMDCNQI) as a n-Type Active Layer and Light Emitting Polymer

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We have investigated electrical properties of vertical type organic transistor using dimethyldicyanoquinonediimine (DMDCNQI) as a n-type active layer. And also, the contact resistance R c for charge injection from a metal electrode to an organic semiconductor layer was studied by transfer line method. The radiance of organic light emitting transistor (OLET) consisting of glass/ITO (drain)/PEDOT:PSS/MEH-PPV/DMDCNQI/Al (gate)/DMDCNQI/Au (source) can be effectively controlled by applying gate voltage like depletion mode.
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Document Type: Research Article

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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