Characterization of Pt/a-Plane GaN Schottky Contacts Using Conductive Atomic Force Microscopy
We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current–voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.
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Document Type: Research Article
Publication date: February 1, 2011
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