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Characterization of Pt/a-Plane GaN Schottky Contacts Using Conductive Atomic Force Microscopy

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We investigated the local electrical properties of Pt Schottky contacts to a-plane n-type GaN using conductive atomic force microscopy (C-AFM). Current–voltage characteristics obtained by C-AFM showed rectifying properties, indicating nano-scale Schottky junction formation. Two-dimensional current maps revealed that the surface microstructures of GaN influenced transport properties of the junctions.
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Document Type: Research Article

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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