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Fabrication and Characteristics of Submicron Stacked-Junctions on Thin Graphite Flakes

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We report on the fabrication and transport characteristics of submicron-size stacks along c-axis of thin graphite flakes. The stacks were fabricated using a three-dimensional focused-ion-beam (FIB) etching technique. The stack with in-plane area A of >0.5 μm2 showed nonlinear concave-like IV characteristics even at 300 K; however the stack with A of > 0.5 μm2 were shown an ohmic-like IV characteristic at 300 K for both low and high-current biasing. It turned into nonlinear characteristics when the temperature goes down. The in-plane area dependence of stack capacitance were discussed and the observed capacitance of stack with A of 0.5 μm2 is smaller than the capacitance of stack with A of 1 μm2 which causes the nonlinear IV characteristics in stack with A of 0.5 μm2 even at 300 K.
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Document Type: Research Article

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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