Fabrication of Nanometer-Scale Carbon Nanotube Field-Effect Transistors on Flexible and Transparent Substrate
We have successfully fabricated nanometer-scale carbon nanotube field effect transistors (CNT FETs) on a flexible and transparent substrate by electron-beam lithography. The measured current-voltage data show good hole conduction FET characteristics, and the on/off ratio of the current is more than 102. The conductance (as well as current) systematically decreases with the increase of the strain, suggesting that the bending of the substrate still affects the deformation condition of the short channel CNT FETs.
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Document Type: Research Article
Publication date: February 1, 2011
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