Atomic Ordering and Structural Determination of AlGaN/AlN/Si(111) Thin Films Using Anomalous X-ray Scattering
The atomic structure and atomic ordering of AlGaN/AlN/Si(111) thin films were studied using regular X-ray diffraction (XRD) and anomalous X-ray scattering (AXS). From regular XRD, both the Al composition and strain status of the AlGaN films are determined. AXS spectra were obtained
near Ga K absorption edge at both the fundamental (0002) Bragg peak and non-vanishing forbidden (0001) peak. From this (0001) Bragg peak, long range atomic ordering with 2 bilayer periodicity is confirmed and the order parameter, S is determined from the integrated intensity
ratio that is maximized upto 0.08 near x ≈ 0.5. The AXS near forbidden peak can be an effective method to reveal the atomic ordering of thin films.
Keywords: ALGAN; ANOMALOUS X-RAY SCATTERING; ATOMIC ORDERING; ORDER PARAMETER
Document Type: Research Article
Publication date: 01 February 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content