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Electrical Properties of Covalently Immobilized Single-Layer Graphene Devices

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Arrays of covalently immobilized and aligned graphene ribbons have been successfully prepared on silicon wafers. The effect of covalent modification on the electrical properties of the single-layer graphene was investigated. The effective electron field mobility of the constructed FETs, measured at 2700 cm2V−1s−1, was higher than that for graphene film directly deposited on SiO2, possibly due to lower phonon scattering from the substrate surface, implying that the field effect mobilities may be enhanced with proper choice of substrates. The contact resistance between Cr electrodes and the single-layer graphene ribbon was determined to be 1.62 kΩ from the TLM structures.
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Keywords: COVALENT FUNCTIONALIZATION; FIELD-EFFECT TRANSISTORS; GRAPHENE; NANOSTRUCTURES

Document Type: Short Communication

Publication date: February 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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