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Suppression of Electrical Breakdown in Silicon Nitride Films Deposited by Catalytic Chemical Vapor Deposition at Temperatures Below 200 °C

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Silicon nitride (SiN x ) films for a gate dielectric layer of thin film transistors were deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C). A mixture of SiH4, NH3 and H2 was used as a source gas. Metal-insulator-semiconductor (MIS) capacitor structures were fabricated for current–voltage (IV) and capacitance–voltage (CV) measurements. The breakdown voltage characteristics of the SiN x films were improved by the increase of NH3/SiH4 and H2/SiH4 mixing ratios and substrate temperatures. H2 treatment was attempted to improve the breakdown voltage further. A breakdown voltage as high as 6.6 MV/cm was obtained after H2 annealing at 180 °C. The defect states inside the SiN x films were analyzed by photoluminescence spectra. Silicon dangling bonds (2.5 eV) and nitrogen dangling bonds (3.1 eV) were observed. These defect states inside the SiN x films disappeared after H2 annealing. Flat band voltage shifts were observed in CV curves, and their magnitudes decreased as the defect states inside the SiN x films decreased.
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Document Type: Research Article

Publication date: January 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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