Suppression of Electrical Breakdown in Silicon Nitride Films Deposited by Catalytic Chemical Vapor Deposition at Temperatures Below 200 °C
Silicon nitride (SiN x ) films for a gate dielectric layer of thin film transistors were deposited by catalytic chemical vapor deposition at a low temperature (≤200 °C). A mixture of SiH4, NH3 and H2 was used as a source gas. Metal-insulator-semiconductor (MIS) capacitor structures were fabricated for current–voltage (I–V) and capacitance–voltage (C–V) measurements. The breakdown voltage characteristics of the SiN x films were improved by the increase of NH3/SiH4 and H2/SiH4 mixing ratios and substrate temperatures. H2 treatment was attempted to improve the breakdown voltage further. A breakdown voltage as high as 6.6 MV/cm was obtained after H2 annealing at 180 °C. The defect states inside the SiN x films were analyzed by photoluminescence spectra. Silicon dangling bonds (2.5 eV) and nitrogen dangling bonds (3.1 eV) were observed. These defect states inside the SiN x films disappeared after H2 annealing. Flat band voltage shifts were observed in C–V curves, and their magnitudes decreased as the defect states inside the SiN x films decreased.
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Document Type: Research Article
Publication date: January 1, 2011
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