Memory Effects of Nonvolatile Memory Devices with a Floating Gate Fabricated Utilizing Ag Nanoparticles Embedded into a Polymethylmethacrylate Layer
Nonvolatile memory devices based on a polymethylmethacrylate (PMMA) layer containing Ag nanoparticles were formed by using a spin coating method. High-resolution transmission electron microscopy images showed that Ag nanoparticles were randomly distributed in the PMMA layer. Capacitance–voltage
(C–V) curves for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device at 300 K showed a hysteresis with a large flat-band voltage shift, indicative of the Ag nanoparticles acting as the charge storage in the memory device. The magnitude of the flat-band
voltage shift for the memory devices increased with increasing Ag nanoparticle concentration. The operating mechanisms for the writing and the erasing processes for the Al/Ag nanoparticles embedded in a PMMA layer/p-Si(100) device are described on the basis of the C–V
results and electronic structures.
Keywords: AG NANOPARTICLE; C-V HYSTERESIS; NONVOLATILE MEMORY DEVICE; OPERATING MECHANISMS; PMMA
Document Type: Research Article
Publication date: 01 January 2011
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content