Improved Oxygen Diffusion Barrier Properties of Ruthenium-Titanium Nitride Thin Films Prepared by Plasma-Enhanced Atomic Layer Deposition
Ru–TiN thin films were prepared from bis(ethylcyclopentadienyl)ruthenium and tetrakis(dimethylamino)titanium using plasma-enhanced atomic layer deposition (PEALD). The Ru and TiN were deposited sequentially to intermix TiN with Ru. The composition of Ru–TiN films was controlled precisely by changing the number of deposition cycles allocated to Ru, while fixing the number of deposition cycles allocated to TiN. Although both Ru and TiN thin films have a polycrystalline structure, the microstructure of the Ru–TiN films changed from a TiN-like polycrystalline structure to a nanocrystalline on increasing the Ru intermixing ratio. Moreover, the electrical resistivity of the Ru0.67–TiN0.33 thin films is sufficiently low at 190 μΩ·cm and was maintained even after O2 annealing at 750 °C. Therefore, Ru–TiN thin films can be utilized as a oxygen diffusion barrier material for future dynamic (DRAM) and ferroelectric (FeRAM) random access memory capacitors.
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Document Type: Research Article
Publication date: January 1, 2011
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