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In2O3 Nanocrystal Memory with the Barrier Engineered Tunnel Layer

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In2O3 nanocrystal memories with barrier-engineered tunnel layers were fabricated on a p-type Si substrate. The structure and thickness of the barrier-engineered tunnel layers were SiO2/Si3N4/SiO2 (ONO) and 2/2/3 nm, respectively. The equivalent oxide thickness of the ONO tunnel layers was 5.64 nm. The average size and density of the In2O3 nanocrystals after the reaction between BPDA-PDA polyimide and the In thin film were about 8 nm and 4 × 1011 cm−2, respectively. The electrons were charged from the channel of the memory device to the quantum well of the In2O3 nanocrystal through the ONO tunnel layer via Fowler–Nordheim tunneling. The memory window was about 1.4 V when the program and erase conditions of the In2O3 nanocrystal memory device were 12 V for 1 s and −15 V for 200 ms.
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Keywords: IN2O3; NANO-FLOATING GATE MEMORY; NANOCRYSTALS; NONVOLATILE MEMORY; TUNNEL

Document Type: Research Article

Publication date: January 1, 2011

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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