Nitrogen-Doped ZnO Thin Films Grown on Glass Substrates by Atomic Layer Deposition Using NH3 as a Doping Source
Nitrogen-doped ZnO (ZnO:N) films were successfully grown on glass substrates by atomic layer deposition (ALD). NH3 was used as a doping source, and the substrate temperature was relatively low (90∼210 °C). The main focus of the study was to report on the effect of the temperature on the electrical properties (e.g., carrier concentration, mobility, etc.) of the grown ZnO:N films. At all temperatures, the carrier was found to be n-type, and its electron concentration did not show much variation within the values between 3 × 1016 and 6 × 1016 cm−3; the mobility increased with the temperature (1 cm2/Vs at 110 °C, 5 cm2/Vs at 190 °C); and the resistivity decreased with the temperature (203 Ωcm at 110 °C, 21 Ωcm at 190 °C). The electrical properties are discussed in relation with the nitrogen concentration, crystallinity, crystal orientation, grain size, and surface morphology. The nitrogen concentration in the ZnO:N films was constant at all temperatures (∼2.5 atomic percent); the crystallinity and crystal orientation improved with the temperature; and the mean grain size increased with the temperature (13.2 nm at 110 °C, 35.3 nm at 190 °C). The results for the ZnO:N films were also compared with the results for the undoped ZnO films.
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Document Type: Research Article
Publication date: January 1, 2011
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