Aluminum Oxide Formation at Al/La1−x Sr x MnO3 Interface: A Computational Study for Resistance Random Access Memory Applications
Resistance random access memory (ReRAM) is emerging as a next-generation nonvolatile memory. One of the most promising materials for the ReRAM application is a composite of a reactive metal [such as aluminum (Al)] and a mixed-valance manganite [such as La1−x Ca x MnO3 (LCMO) and La1−x Sr x MnO3 (LSMO)]. One of the current hypotheses regarding the origin of the resistive switching of such systems is a voltage-controlled reversible formation of a high-resistance aluminum oxide (AlO x ) layer at the Al/LC(S)MO interface through oxygen migration from LC(S)MO. To validate this hypothesis, quantum mechanics (density functional theory) calculations were carried out on an atomistic model of the resistive-switching phenomena at the Al/LSMO interface (the composite systems of Al/LSMO and AlO x /LSMO) as well as on the component materials such as Al, AlO x , LaMnO3, LaMnO3−δ , La1−x Sr x MnO3, and La1−x Sr x MnO3−δ . The changes in the structure, energy, and electronic structure of these systems during the oxygen vacancy formation in LSMO, the oxygen migration through the Al/LSMO interface, and the AlO x formation were investigated.
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Document Type: Research Article
Publication date: January 1, 2011
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