Hole-Effective Masses in the Transport Calculation of Si Nanowire pMOSFETs
The full-quantum, self-consistent simulation of p-type silicon nanowire field effect transistors based on the k·p method is performed and their device characteristics are examined in the light of the hole-effective masses. An attempt is made in this study to assess the role of the hole-effective masses by devising simple, single-band parabolic effective mass (PEM) Hamiltonians and comparing the transport characteristics with the ones from the k·p method. It is found that the PEM Hamiltonian with isotropic effective masses fails to correctly produce both the scaling behavior of the subthreshold currents and the behavior of the on-currents with respect to the silicon orientation. A modified PEM model with light-hole effective mass in the transport direction and quantization effective mass in the perpendicular direction greatly improve the subthreshold behavior for all the silicon orientations, which shows that the top-most light-hole subband dominantly determines the subthreshold behavior. The modified PEM model however overestimates the on-currents, indicating the limitation of the model.
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Document Type: Research Article
Publication date: January 1, 2011
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