Formation and Characterization of Sub-Nanometer Scale cF8 Ge Precipitates in Si-Based Amorphous Matrix
Sub-nanometer size cF8 Ge clusters are found to be homogeneously distributed within the Si–Mn amorphous matrix of the SiGeMn thin films deposited by sputtering technique on silicon substrate. The existence of such clusters is observed by XRD and TEM. The electrical conduction in such a composite film seems to be governed by the variable range hopping. Such a two-phase semi-conductive composite material with nearly atomic-scale phase separation may be considered as a suitable functional material for nano-electronics and nano-electromechanical systems.
Keywords: AMORPHOUS ALLOYS; NANOMATERIAL; SEMICONDUCTORS
Document Type: Research Article
Publication date: 01 October 2009
- Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
- Editorial Board
- Information for Authors
- Subscribe to this Title
- Terms & Conditions
- Ingenta Connect is not responsible for the content or availability of external websites
- Access Key
- Free content
- Partial Free content
- New content
- Open access content
- Partial Open access content
- Subscribed content
- Partial Subscribed content
- Free trial content