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Monte Carlo Simulation of Scanning Electron Microscope Image of Sidewall Shape for Linewidth Measurement

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Scanning electron microscope (SEM) has been an important tool for the observation of surface micro-structures of various kinds of materials. The secondary electron image, which uses secondary electrons that escaped from the surface under a primary electron beam bombardment as imaging signals, can provide the surface topographic information with a resolution up to sub-nm with a modern SEM. Therefore, it can be used for nanometrology with improved measurement accuracy by critical dimension scanning electron microscope (CD-SEM). This work aims to develop a Monte Carlo simulation method for application to the nanometer linewidth measurement for semiconductor devices by SEM. The simulation will provide a theoretical analysis of the influence of various parameters of specimen and electron beam on the estimation of linewidth and the sidewall angles. The result will be helpful for the improvement of the measurement precision by CD-SEM.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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