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Monte Carlo Simulation of Dopant Contrast in Scanning Electron Microscope Image

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In this work, the dopant contrast in SEM image between the p-type and n-type areas in the semiconductor device is studied by using a Monte Carlo simulation method. The work function induced by the surface state is considered to be responsible for the dopant contrast. A layer-by-layer structure, i.e., three p-type layers with different concentrations and one n-type layer, each of them is separated by a undoped intrinsic Si layer, has been simulated to compare with the experimental observation. The simulated image shows clearly a dopant contrast between the layers and the undopted Si substrate.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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