Comparison of the Synthesis of Ge Nanocrystals in Hafnium Aluminum Oxide and Silicon Oxide Matrices
Growth of germanium (Ge) nanocrystals in silicon (Si) oxide and hafnium aluminum oxide (HfAlO) is examined. In Si oxide, nanocrystals were able to form at annealing temperatures of 800 °C to 1000 °C. Nanocrystals formed at 800 °C were round and ∼8 nm in diameter, at 900 °C they become facetted and at 1000 °C they become spherical again. In HfAlO, at 800 °C nanocrystals formed are relatively smaller (∼3 nm in diameter) and lower in density. While at 900 °C and 1000 °C, nanocrystals did not form due to out-diffusion of Ge. Different nanocrystal formation characteristics in the matrices are attributed to differences in their crystallization temperatures.
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Document Type: Research Article
Publication date: February 1, 2009
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