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Nickel Silicide Nanostructures Transformed from Site-Specific Silicon Nanostructures

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An approach was proposed for fabricating nickel silicide nanostructures by self-aligned transformation from site-specific silicon nanostructures on the silicon-on-insulator substrate. The silicon nanostructures were firstly fabricated through the sequence of electron beam lithography and pattern transfer to silicon with reactive ion etching. The line-width of structures was shrunk by focused ion beam milling technology. Then nickel silicide nanostructures with the line-width of less than 50 nm were obtained on the insulator separation layer by sequential processes of nickel film deposition, rapid thermal annealing and wet-chemical etching. It was shown that 550 °C was an optimal annealing temperature to form NiSi nanostructures with low resistivity of about 15 μΩ·cm. As-formed metallic NiSi nanowire showed stable electrical properties at elevated temperature.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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