Local Structural and Electrical Properties of Ferroelectric Bi3.25La0.75Ti3O12 Thin Films on Pt
Ferroelectric Bi3.25La0.75Ti3O12 (BLT) thin films have been grown by a sol–gel method. Annealing conditions after the drying process have been explored over a wide range of temperature. BLT thin films prepared on Pt/TiO2 coated SiO2/Si(100) were investigated by Raman scattering spectroscopy, atomic force microscopy (AFM), and X-ray photoelectron spectroscopy. Raman spectra reveal the growth route of phase-formation of the BLT films. Ferroelectric domains in the thin films are observed by using AFM, registering the electrostatic force response of the thin films in the presence of a low ac field. It is found that the as-grown domain configuration and switching behavior are strongly dependent on growth temperature. Depth-profiling of the electronic states of Bi, Ti, and La atoms shows the oxidation during the growth.
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Document Type: Research Article
Publication date: February 1, 2009
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