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Electronic Structures of InN/GaN Quantum Dots

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In this letter, ab-initio calculations are performed to study the electronic structures of the InN quantum dot embedded in the GaN matrix. By analyzing the site-decomposed densities of states, an anisotropic potential well in the dot region is clearly depicted. The In atom at the center of the quantum dot provides the highest densities of states for discrete peaks while the Ga atoms nearby In atoms also act as contributor due to hybridization. The partial charge densities distribution of conduction band minimum and valance band maximum illustrates that the charges are well localized in the InN dot region.
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Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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