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Controllable Growth of Nanocrystalline Diamond Films by Hot-Filament Chemical Vapor Deposition Method

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Nanocrystalline diamond (NCD) films are deposited on Si wafer by using bias-assisted hot-filament chemical vapor deposition (HFCVD) method. The average grain size was controllable by varying CH4 concentration. The scanning electron microscopy (SEM), Raman scattering spectroscopy and X-ray diffraction (XRD) were used to investigate the morphology, phase purity, and crystallinity of NCD films, respectively. Furthermore, we found that the morphological evolving of NCD films was corresponding to the variation of bias current, which might have close relation to thermal field electrons emission from NCD films at high temperature during the growth process, and then the related mechanism was discussed.
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Keywords: BIAS CURRENT; CH4 CONCENTRATION; NANOCRYSTALLINE DIAMOND FILMS

Document Type: Research Article

Publication date: February 1, 2009

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  • Journal for Nanoscience and Nanotechnology (JNN) is an international and multidisciplinary peer-reviewed journal with a wide-ranging coverage, consolidating research activities in all areas of nanoscience and nanotechnology into a single and unique reference source. JNN is the first cross-disciplinary journal to publish original full research articles, rapid communications of important new scientific and technological findings, timely state-of-the-art reviews with author's photo and short biography, and current research news encompassing the fundamental and applied research in all disciplines of science, engineering and medicine.
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